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Optical, structural, and magnetic properties of p-type GaN implanted with Fe+ (5 and 10 at%)

Authors
Shon, Yoon-KyungPark, YoungsinLee, SeejoonJeon, Hee ChangKwon, YunheeKang, Tae WoKim, Jin SoakKim, Eun KyuKim, Chang KyungYoon, C. S.
Issue Date
Jan-2007
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.204, no.1, pp.78 - 85
Indexed
SCIE
SCOPUS
Journal Title
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume
204
Number
1
Start Page
78
End Page
85
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180555
DOI
10.1002/pssa.200673018
ISSN
1862-6300
Abstract
p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe+. The results of energy dispersive X-ray peak displayed the Fe-injected concentration of 5 and 10 at%, respectively. The results of photoluminescence measurement show that optical transitions related to Fe appear at 2.5 and 3.1 eV. It was confirmed that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak at 3.1 eV is a conduction band-Fe acceptor transition. Apparent ferromagnetic hysteresis loops measured at 10 and 300 K with the Fe concentration of 10 at% were observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting up to 300 K. The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5 -> 10 at%) takes place with an increase in the annealing temperature from 700 to 850 degrees C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002) including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the increased sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy systematically.
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서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles

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