Formation of the electron spectrum of ZnSe-based scintillators under annealing in zinc vapor

Abstract

The effects of an aftergrowth annealing of ZnSe(IVD) scintillators of two types in a Zn vapor have been studied by using a complex optical investigation. As a result of such an annealing, there arises an absorption band with a maximum at E = 2.35 eV. The results of the annealing in zinc indicate that the luminescence peak at 625 nm induced by a photoexcitation within the absortion band and an absorption on the free charge carriers in the IR spectral range are inherent in both types of crystals. The carrier concentration can be calculated up to values on the order of 2 x 10(16) cm(-3).