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The electronic structure of Ni doped rutile TiO2

Authors
Kim, Yoon-SukChung, Yong-ChaeLee, Kyung Sub
Issue Date
Dec-2006
Publisher
SPRINGER
Keywords
Ni doped TiO2; density functional theory; electronic structure; defect states; partial charge density
Citation
JOURNAL OF ELECTROCERAMICS, v.17, no.2-4, pp.951 - 953
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ELECTROCERAMICS
Volume
17
Number
2-4
Start Page
951
End Page
953
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180684
DOI
10.1007/s10832-006-7985-6
ISSN
1385-3449
Abstract
The electronic structure of 6.25% Ni doped rutile titanium dioxide (Ni/TiO2) was investigated by ab initio ultrasoft pseudopotential plane wave method based on density functional theory. When a Ni atom was substituted for a Ti site of TiO2 lattice, two additional unoccupied 3d states appeared as defect states in band gap, and occupied 3d states were hybridized with oxygen 2p states. From the calculation of band decomposed charge density and density of states, it was found that the lower defect state (D-1), a Ni 3d-orbital, was hybridized with unoccupied oxygen 2p states and the higher one (D-2), localized 3d-orbital of Ni, was located at the middle of band gap.
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