Fabrication of Cu/Co bilayer gate electrodes using selective chemical vapor deposition and soft lithographic patterning

Abstract

A templated Cu/Co bilayer gate electrode was fabricated using the combined method of consecutive and selective chemical vapor deposition (CVD), and octadecyltrichlorosilane (OTS) microcontact printing techniques. Soft lithographically patterned self-assembled monolayers (SAMs) can direct the growth of Co occurring at the low temperatures 50-90 degrees C and serve as a template for the consecutive and selective growth of Cu, thereby forming stable and high quality Cu/Co bilayer gate electrodes on a glass substrate. This simple process provides fewer process steps and higher performance than other conventional processes, and can be applied to the fabrication of large area and high resolution thin film transistor liquid crystal displays.