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High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices
- Authors
- Kim, Taewhan; Choo, Dong Chul; No, Young-soo; Choi, WK; Choi, Eun Ha
- Issue Date
- Dec-2006
- Publisher
- ELSEVIER
- Keywords
- Al-doped ZnO; resistivity; transmittance; work function; organic light-emitting devices
- Citation
- APPLIED SURFACE SCIENCE, v.253, no.4, pp.1917 - 1920
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 253
- Number
- 4
- Start Page
- 1917
- End Page
- 1920
- ISSN
- 0169-4332
- Abstract
- Deposition of Al-doped ZnO (AZO) films with various film thicknesses on glass substrates was performed to investigate the feasibility of using AZO films as anode electrodes in organic light-emitting devices (OLEDs). The electrical resistivity of the AZO films with a 180-nm thickness was 4.085 x 10(-2) Omega cm, and the average optical transmittance in the visible range was 80.2%. The surface work function for the AZO films, determined from the secondary electron emission coefficients obtained with a focused ion beam, was as high as 4.62 eV. These results indicate that AZO films grown on glass substrates hold promise for potential applications as anode electrodes in high-efficiency OLEDs. (c) 2006 Elsevier B.V. All rights reserved.
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