Enhancement of the activation energy due to coupling effects in CdxZn1-xTe/ZnTe double quantum dots
- Authors
- Kim, Tate Whan; Lee, Hong Seok; Park, Hong Lee
- Issue Date
- Dec-2006
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.100, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 100
- Number
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180743
- DOI
- 10.1063/1.2374650
- ISSN
- 0021-8979
- Abstract
- Temperature-dependent photoluminescence measurements show that the activation energy of Cd0.6Zn0.4Te/ZnTe double quantum dots (QDs) increases with decreasing ZnTe separation layer. At a separation-layer thickness of 6 nm, this behavior can be attributed to enhancement in the tunneling probability of carriers from the smaller Cd0.6Zn0.4Te 1.5-monolayer (ML) QDs to the larger 3.0-ML QDs due to the coupling effect between the upper and the lower Cd0.6Zn0.4Te QDs. The present results indicate that the activation energy in Cd0.6Zn0.4Te/ZnTe double QDs is significantly affected by the ZnTe separation layer.
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