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Efficient fabrication and characterization of cobalt nanoparticles embeddedin metal/oxide/semiconductor structures for the application of nonvolatile memory
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Jung Yup | - |
| dc.contributor.author | Yoon, Kap Soo | - |
| dc.contributor.author | Choi, Won Joon | - |
| dc.contributor.author | Do, Young Ho | - |
| dc.contributor.author | Kim, Ju Hyung | - |
| dc.contributor.author | Kim, Chae Ok | - |
| dc.contributor.author | Hong, Jin Pyo | - |
| dc.date.accessioned | 2022-12-21T09:55:03Z | - |
| dc.date.available | 2022-12-21T09:55:03Z | - |
| dc.date.issued | 2006-11 | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.issn | 2166-2746 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180776 | - |
| dc.description.abstract | Metal-oxide-semiconductor (MOS) capacitors with Co nanoparticles (Co NPs) were successfully fabricated by utilizing an external laser irradiation method for the application of nonvolatile memory. Experimental images of cross-sectional transmission electron microscopy showed that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 layer. Capacitance-voltage measurements of Pt/SiO2/Co NPs/SO2 on p-type Si (100) substrate certainly exhibited typical MOS behavior with a flatband voltage shift of 1.1 V. In addition, the charge retention characteristics of MOS capacitors with the Co NP were investigated using Capacitance-time measurements. The present results indicate that their unique laser process gives rise to a possible promise for the efficient formation or insertion of metal NPs inside the MOS structures. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Efficient fabrication and characterization of cobalt nanoparticles embeddedin metal/oxide/semiconductor structures for the application of nonvolatile memory | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1116/1.2366612 | - |
| dc.identifier.scopusid | 2-s2.0-33845267735 | - |
| dc.identifier.wosid | 000243324400026 | - |
| dc.identifier.bibliographicCitation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.24, no.6, pp 2636 - 2639 | - |
| dc.citation.title | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | - |
| dc.citation.volume | 24 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 2636 | - |
| dc.citation.endPage | 2639 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
| dc.subject.keywordPlus | SONOS | - |
| dc.subject.keywordPlus | STORAGE | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.identifier.url | https://avs.scitation.org/doi/full/10.1116/1.2366612 | - |
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)