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Co/CoAl/Co trilayer fabrication using spontaneous intermixing of Co and Al: Molecular dynamics simulation

Authors
Kim, Sang-PilChung, Yong-ChaeLee, Seung-CheolLee, Kwang-RyeolKim, Deok-Soo
Issue Date
Nov-2006
Publisher
ELSEVIER SCIENCE SA
Keywords
multilayer; interface mixing; Co-Al; molecular dynamics
Citation
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.135, no.1, pp.25 - 29
Indexed
SCIE
SCOPUS
Journal Title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume
135
Number
1
Start Page
25
End Page
29
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180794
DOI
10.1016/j.mseb.2006.08.027
ISSN
0921-5107
Abstract
A multilayer structure was simulated using spontaneous intermixing of Co and Al in epitaxial Co(1 1 (2) over bar 0)/CoAl/Co(1 1 (2) over bar 0) structures. When Al atoms with 0. 1 eV energy were deposited on Co(1 1 (2) over bar 0), an Al(1 0 0) thin film was grown without any intermixing. Interestingly, during subsequent deposition of Co atoms on the grown Al(1 0 0) thin film, an intermixed layer of ordered CoAl structure was spontaneously formed and a highly oriented Co(1 1 (2) over bar 0) crystalline phase was grown above the intermixed region. From the calculations of nearest neighbor distributions, various compositions of CoxAl1-x structures were observed in the mixed region.
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서울 공과대학 > 서울 기계공학부 > 1. Journal Articles
서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

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COLLEGE OF ENGINEERING (SCHOOL OF MECHANICAL ENGINEERING)
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