Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Use of successive ionic layer adsorption and reaction (SILAR) method for amorphous titanium dioxide thin films growth
- Authors
- Kale, Sangram; Mane, Rajaram S.; Chung, Hoeil; Yoon, Moon-Young; Lokhande, C. D.; Han, Sung-Hwan
- Issue Date
- Nov-2006
- Publisher
- Elsevier BV
- Keywords
- titanium dioxide; SILAR; XRD; SEM; UV-vis; electrical resistivity
- Citation
- Applied Surface Science, v.253, no.2, pp 421 - 424
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Surface Science
- Volume
- 253
- Number
- 2
- Start Page
- 421
- End Page
- 424
- ISSN
- 0169-4332
1873-5584
- Abstract
- Use of successive ionic layer adsorption and reaction (SILAR) method was preferred for the growth of amorphous titanium dioxide (TiO2) thin films at ambient temperature. Further, these films were annealed at 673 K for 2 h in air for structural improvement and characterized for structural, surface morphological, optical and electrical properties. An amorphous structure of TiO2 was retained even after annealing as confirmed from XRD studies. The spherical grains of relatively large size were compressed after annealing. A red shift in band gap energy and decrease in electrical resistivity were observed due to annealing treatment.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Chung, Hoeil
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF CHEMISTRY)