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Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jea-Gun | - |
| dc.contributor.author | Shim, Tae-Hun | - |
| dc.contributor.author | Lee, Gon-Sub | - |
| dc.contributor.author | Cho, Won-Ju | - |
| dc.contributor.author | Ahn, Chang-Geun | - |
| dc.date.accessioned | 2022-12-21T10:04:15Z | - |
| dc.date.available | 2022-12-21T10:04:15Z | - |
| dc.date.issued | 2006-10 | - |
| dc.identifier.issn | 1078-621X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180863 | - |
| dc.description.abstract | The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/SOI.2006.284426 | - |
| dc.identifier.scopusid | 2-s2.0-43749103562 | - |
| dc.identifier.bibliographicCitation | IEEE International SOI Conference, pp 47 - 48 | - |
| dc.citation.title | IEEE International SOI Conference | - |
| dc.citation.startPage | 47 | - |
| dc.citation.endPage | 48 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Rapid thermal annealing | - |
| dc.subject.keywordPlus | Semiconductor growth | - |
| dc.subject.keywordPlus | Silicon alloys | - |
| dc.subject.keywordPlus | Silicon on insulator technology | - |
| dc.subject.keywordPlus | Surface roughness | - |
| dc.subject.keywordPlus | Channel surface roughness | - |
| dc.subject.keywordPlus | MOSFET devices | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/4062874 | - |
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