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Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET
- Issue Date
- Oct-2006
- Citation
- IEEE International SOI Conference, pp 47 - 48
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- IEEE International SOI Conference
- Start Page
- 47
- End Page
- 48
- ISSN
- 1078-621X
- Abstract
- The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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