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Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET
- Issue Date
- Oct-2006
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- Proceedings - IEEE International SOI Conference, pp.47 - 48
- Indexed
- SCOPUS
- Journal Title
- Proceedings - IEEE International SOI Conference
- Start Page
- 47
- End Page
- 48
- ISSN
- 1078-621X
- Abstract
- The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)