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Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films
- Issue Date
- Oct-2006
- Publisher
- IEEE
- Keywords
- (Ga0.995Mn0.005)N thin film; High Curie temperature; Mn delta-doping
- Citation
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.400 - 401
- Indexed
- SCOPUS
- Journal Title
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
- Volume
- 1
- Start Page
- 400
- End Page
- 401
- ISSN
- 0000-0000
- Abstract
- The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.
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