Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J. H. | - |
dc.contributor.author | Woo, Jun Taek | - |
dc.contributor.author | Kim, Tate | - |
dc.contributor.author | Yoo, Keon Ho | - |
dc.contributor.author | Lee, Y. T. | - |
dc.date.accessioned | 2022-12-21T10:36:59Z | - |
dc.date.available | 2022-12-21T10:36:59Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181068 | - |
dc.description.abstract | The microstructural properties and the shape of an InAs/GaAs array grown by molecular beam epitaxy were studied using transmission electron microscopy (TEM) measurements, and the interband transitions were investigated by using temperature-dependent photoluminescence (PL) measurements. The shape of the InAs quantum dots (QDs) on the basis of the cross-sectional bright-field TEM image was modeled to be a convex-plane lens. The electronic subband energies and the wave functions were numerically calculated by using a three-dimensional finite-difference method, taking into account strain effects. The excitonic peaks corresponding to interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the multiple-stacked QDs, as determined from the PL spectra, were in reasonable agreement with the (E-1-HH1) interband transition energies obtained from the results of the numerical calculations. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tate | - |
dc.identifier.doi | 10.1063/1.2353783 | - |
dc.identifier.scopusid | 2-s2.0-33749316965 | - |
dc.identifier.wosid | 000240876600073 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.100, no.6 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INAS | - |
dc.subject.keywordPlus | GAAS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2353783 | - |
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