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Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10 at. %)
- Authors
- Shon, Yoon; Lee, Sejoon; Jeon, Hee Change; Park, Young S.; Kim, Deukyoung; Kang, Taewon Wang; Kim, Jin Soak; Kim, Eun Kyu; Fu, Dejun; Fan, Xiangjun; Park, Youngju; Baik, Jeong Min; Lee, Joog Lam
- Issue Date
- Aug-2006
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.89, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 89
- Number
- 8
- ISSN
- 0003-6951
1077-3118
- Abstract
- The systematic enhancement of ferromagnetic hysteresis loops for GaN implanted with high doses of Fe (5 -> 10 at. %) takes place with an increase in the annealing temperature from 700 to 850 degrees C. The trends of magnetic properties coincide with the results of the increased full width at half maximum of triple axis diffraction for GaN (0002), including the appearance of GaFeN, the enhanced Fe-related photoluminescence transitions, and the systematic increase in sizes of symmetric spin ferromagnetic domains GaFeN in atomic force microscopy and magnetic force microscopy.
- Appears in
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