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Magnetic and electronic properties of transition metal doped beta-SIC - a diluted magnetic semiconductor
- Authors
- Kim, Yoon-Suk; Kim, Hanchul; Chung, Yong-Chae
- Issue Date
- Aug-2006
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Keywords
- diluted magnetic semiconductor; beta-SiC; 3d transition metal; density functional theory; electronic structure
- Citation
- SCIENCE OF ENGINEERING CERAMICS III, v.317-318, pp.889 - 892
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE OF ENGINEERING CERAMICS III
- Volume
- 317-318
- Start Page
- 889
- End Page
- 892
- ISSN
- 1013-9826
- Abstract
- We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped beta-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 mu(B) regardless of substitution site. In addition, the SiC:Cr-Si is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.
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Related Researcher
- Chung, Yong Chae
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)