Nonvolatile memory cell effect in multilayered Ni1-xFex self-assembled nanoparticle arrays in polyimpide
- Authors
- Jung, Jae Hun; Kim, Jae Ho; Kim, Tae Whan; Yoon, Chong Seung; Kim, Young-Ho; Jin, Sungho
- Issue Date
- Jul-2006
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 89
- Number
- 2
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181259
- DOI
- 10.1063/1.2220548
- ISSN
- 0003-6951
- Abstract
- Transmission electron microscopy images showed that self-assembled Ni1-xFex nanoparticle arrays were periodically inserted in the polyimide (PI) layers. Capacitance-voltage (C-V) measurements on Al/PI/multiple-stacked Ni1-xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed a metal-insulator-semiconductor capacitor behavior with different flatband voltage shifts, which depended on the value of the sweep voltage, due to the variations of the charged electron density in the multiple-stacked Nil,Fe, nanoparticle arrays. Conductance-voltage (G-V) measurements showed that the conductance peak related to the interface trap disappeared, and that the positions of the C-V and the G-V hystereses at the sweep voltage were different.
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