Resistive switching characteristics of unique binary-oxide MgOx films

Abstract

Novel MgOx thin films for nonvolatile memory applications were deposited on silicon substrates using a reactive RF magnetron sputtering system at room temperature, and were then annealed with a rapid thermal annealing process in a N-2 atmosphere at various annealing temperatures. Current-voltage (I-V) and X-ray diffraction measurements were carried out to analyze the resistance switching phenomenon and the structural properties of the as-grown and the annealed MgOx thin films, respectively. Typical I-V curves of the annealed samples clearly exhibited reproducible resistance switching behaviors for the on-off states with an improved stability.