Femtosecond-laser surface structuring of amorphous and crystalline silicon
- Authors
- Lee, Geon Joon; Lee, YoungPak; Cheong, Hyeonsik; Yoon, Chong Seung; Oh, Cha Hwan; Kim, Eun Kyu; Son, Yong-Duck; Jang, Jin
- Issue Date
- Jun-2006
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- femtosecond-laser-induced grating; Fourier transform; computer-generated hologram; amorphous silicon; crystallization; amorphization
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1268 - 1272
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 48
- Number
- 6
- Start Page
- 1268
- End Page
- 1272
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181373
- ISSN
- 0374-4884
- Abstract
- The surface structuring of amorphous and crystalline silicon was performed by using ferntosecond-laser-induced phase transformations: i) amorphous-to-crystalline and ii) crystalline-to-amorphous. The amorphous silicon (a-Si) films were prepared on glass substrates by using plasma-enhanced chemical-vapor deposition. Two kinds of micropatterns were produced in the a-Si films: i) a two-dimensional (2D) pattern (a word 'q-Psi') was produced by using the inverse Fourier transform of a computer-generated hologram, and ii) laser-induced gratings (LIGs) were made by means of two-beam interference of near-infrared femtosecond-laser pulses. By using micro-Raman spectroscopy, optical microscopy, scanning electron microscopy, and transmission electron microscopy, the ferntosecond-laser pulses were found to induce a localized phase transformation from the amorphous to the crystalline phase, and the spatially-selected crystallization of a-Si was found to be responsible for the formation of patterns such as the LIG and the 2D pattern. Crystalline silicon (c-Si) with a SiO2 capping layer was also periodically modified by femtosecond holography. A micro-Raman study indicated that the LIG formation in c-Si could be ascribed to the spatially-selected amorphization of c-Si.
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