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Electrical characterization of GaAs/AlGaAs multi-quantum wells for quantum cascade laser
- Issue Date
- Jun-2006
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- quantum cascade laser; multi-quantum wells; deep level transient spectroscopy (DLTS); GaAs/AlGaAs
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6B, pp.5478 - 5480
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- Volume
- 45
- Number
- 6B
- Start Page
- 5478
- End Page
- 5480
- ISSN
- 0021-4922
- Abstract
- Deep-level transient spectroscopy (DLTS) was performed to investigate the energy levels introduced inside quantum wells in the active region of a quantum cascade laser (QCL) structure. To form a simple active region, we prepared samples with GaAs/AlGaAs three and single-quantum-well (QW) structures. At least two QW levels were observed from the DLTS spectra for a three-QW structure and their activation energies were calculated to be approximaely 0.11-0.13 eV for QW1 and 0.20-0.22 eV for QW2. The positions of energy levels in multi quantum wells were slightly shifted upward by the applied electric field. In the case of a single QW, an activation energy of 0.08eV was obtained.
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