Bistable Resistance Switching Behaviors of SiO2 and TiO2 Binary Metal Oxide Films

Abstract

The bistable resistance switching characteristics of amorphous SiO2 and poly-crystalline TiO2 were investigated using Pt top and bottom electrodes sandwiched structure. Both films exhibit well defined switching characteristics. All device operation characteristic parameters such as forming, reset, and set voltages of TiO2 are distinctly smaller than those of SiO2, indicating that the values of these parameters can be related to the dielectric constant. From I-V curve analyses, it is found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively.