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Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates

Authors
Kim, T. W.Lee, HoseongLee, Jeong YongJeon, Hwan ChulKang, Tae Won
Issue Date
Jun-2006
Publisher
ELSEVIER SCIENCE BV
Keywords
crystal structure; molecular beam epitaxy; magnetic materials
Citation
JOURNAL OF CRYSTAL GROWTH, v.292, no.1, pp.62 - 66
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF CRYSTAL GROWTH
Volume
292
Number
1
Start Page
62
End Page
66
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181392
DOI
10.1016/j.jcrysgro.2006.02.058
ISSN
0022-0248
Abstract
Hexagonal MnAs thin films were grown on GaAs (100) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.
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