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Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates
- Issue Date
- May-2006
- Publisher
- American Institute of Physics
- Citation
- Journal of Applied Physics, v.99, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Applied Physics
- Volume
- 99
- Number
- 9
- ISSN
- 0021-8979
1089-7550
- Abstract
- The coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt-type and CuAu-I-type ordered structures, together with a spinodal-like phase separation were formed in the CdxZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.
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