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Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

Authors
Lee, HSSohn, HSLee, JYLee, KHKim, YHKim, TWKwon, MSPark, HL
Issue Date
May-2006
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.99, no.9
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
99
Number
9
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181502
DOI
10.1063/1.2195020
ISSN
0021-8979
Abstract
The coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt-type and CuAu-I-type ordered structures, together with a spinodal-like phase separation were formed in the CdxZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.
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