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Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer
- Authors
- Shon, Yoon; Jeon, Hwan Chul; Park, Youngsin; Lee, Seung Joo; Kwon, Yunhee; Lee, Seung-Joo; Kim, Deukyoung; Kim, Hyungsang; Kang, Tae Won; Park, Youn Jung; Yoon, Chong Seung; Kim, Chang Kyung; Kim, Eung-Kwon; Kim, Yongmin; Woo, Yong-Deuck
- Issue Date
- May-2006
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- InMnP : Zn epilayer; MOCVD; MBE
- Citation
- THIN SOLID FILMS, v.505, no.1-2, pp.129 - 132
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 505
- Number
- 1-2
- Start Page
- 129
- End Page
- 132
- ISSN
- 0040-6090
- Abstract
- p-type InP:Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP:Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP:Zn epilayer was found, and single-phased lnMnP:Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP:Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 70 K.
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Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
- 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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Related Researcher
- Yoon, Chong Seung
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)