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Study of ashing for low-k dielectrics using the N-2/O-2 ferrite-core inductively coupled plasmas
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyoun Woo | - |
| dc.contributor.author | Myung, Ju Hyun | - |
| dc.contributor.author | Kim, Nam Ho | - |
| dc.contributor.author | Lee, Han Sup | - |
| dc.contributor.author | Park, Se-Geun | - |
| dc.contributor.author | Lee, Jae Gab | - |
| dc.contributor.author | Chung, Chin Woo | - |
| dc.contributor.author | Park, Wan Jae | - |
| dc.contributor.author | Kang, Chang-Jin | - |
| dc.contributor.author | Yoo, Chung-Gon | - |
| dc.contributor.author | Ko, Kwang-Hyuk | - |
| dc.contributor.author | Woo, Je-Ho | - |
| dc.contributor.author | Choi, Sang-Don | - |
| dc.contributor.author | Choi, Dae-Kyu | - |
| dc.date.accessioned | 2022-12-21T11:34:00Z | - |
| dc.date.available | 2022-12-21T11:34:00Z | - |
| dc.date.issued | 2006-05 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181523 | - |
| dc.description.abstract | We have studied the characteristics of photoresist (PR) ashing using N-2/O-2 plasmas in ferrite-core inductively coupled plasma etcher. By varying the O-2/(O-2+N-2) gas flow ratio, we have changed the PR ash rate and the low-k material etch rate, obtaining the PR ash rate and the PR to low-k materials etch selectivity, respectively, of 15,000 angstrom/min and 180. Fourier transform infrared spectroscopy and HF etch test coincidentally indicated that the ash damage to the low-k material decreased with decreasing the O-2/(O-2+N-2) gas flow ratio. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier Sequoia | - |
| dc.title | Study of ashing for low-k dielectrics using the N-2/O-2 ferrite-core inductively coupled plasmas | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.1016/j.tsf.2005.08.089 | - |
| dc.identifier.scopusid | 2-s2.0-33645226656 | - |
| dc.identifier.wosid | 000236932300049 | - |
| dc.identifier.bibliographicCitation | Thin Solid Films, v.506, pp 222 - 224 | - |
| dc.citation.title | Thin Solid Films | - |
| dc.citation.volume | 506 | - |
| dc.citation.startPage | 222 | - |
| dc.citation.endPage | 224 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | METHYLSILSESQUIOXANE | - |
| dc.subject.keywordPlus | DAMAGE | - |
| dc.subject.keywordAuthor | plasma processing and deposition | - |
| dc.subject.keywordAuthor | low-k material | - |
| dc.subject.keywordAuthor | ferrite-core | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609005012186?via%3Dihub | - |
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