Electrical properties of ZnO nano-particles embedded in polyimide
- Authors
- Kim, Eunkyu; Kim, Juhyung; Noh, HK; Kim, Young-ho
- Issue Date
- Apr-2006
- Publisher
- MINERALS METALS MATERIALS SOC
- Keywords
- nano-particle; polyimide matrix; electrical charging; ZnO; metal-insulator-semiconductor (MIS)
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.35, no.4, pp.512 - 515
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 35
- Number
- 4
- Start Page
- 512
- End Page
- 515
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181586
- DOI
- 10.1007/s11664-006-0091-3
- ISSN
- 0361-5235
- Abstract
- The ZnO nano-particles were made in the polyimide dielectric matrix by using the chemical reaction between the zinc metal film and polyamic acid. The concentration of the ZnO particle is about 1.5 x 10(12) cm(-2), with average size below 10 nm, and its shapes are almost spherical. Then, the polyimide layer is a stable dielectric material with a dielectric constant of 2.9. To investigate the electrical properties of ZnO particles in the polyimide insulator film, we fabricated a metal-insulator-semiconductor (MIS) structure and measured capacitance-voltage (C-V) with temperature modulation. At room temperature, C-V hysteresis with a voltage gap of 2.8 V appeared in the MIS structure using SiO2/Si substrate. As the measuring temperature decreased, the C-V curves were shifted slightly to the accumulation region with gate bias. It was considered that the electrical charging may occur dominantly in nanoparticles, having only a few defects at the interface of the polyimide/SiO2 and the polyimide/ZnO.
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