Remote plasma atomic layer deposition of HfO2 thin films using the alkoxide precursor Hf(mp)(4)

Abstract

Hafnium 3-methyl-3-pentoxide precursor, Hf(mp)(4), was newly synthesized as an alkoxide precursor and used to deposit HfO2 films by remote plasma atomic layer deposition (ALD). The characteristics of the HfO2 films were compared with the films deposited using tetrakis(diethylamido)hafnium [Hf(NEt2)(4)] which is used frequently for ALD processes. The HfO2 films deposited with the Hf(mp)(4) had a well-controlled rate of deposition at low temperatures and maintained a low amount of carbon contamination. In addition, the HfO2 films deposited by using Hf(mp)(4) exhibited a higher phase transition temperature and lower leakage current densities than those of HfO2 films deposited using Hf(NEt2)(4).