Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films
DC Field | Value | Language |
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dc.contributor.author | Choi, Jihoon | - |
dc.contributor.author | Kim, Seokhoon | - |
dc.contributor.author | Kang, Hyunseok | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Bae, Choelhwyi | - |
dc.date.accessioned | 2022-12-21T12:11:36Z | - |
dc.date.available | 2022-12-21T12:11:36Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181866 | - |
dc.description.abstract | The effect of remote plasma nitridation (RPN) pretreatment on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films was investigated. An atomic change in the nitrogen's partial local coordination structure in the vicinity of Hf-O-Si was closely associated with the structural and electrical characteristics of the HfO2 films. The HfO2 film pretreated with RPN retained its amorphous structure after rapid thermal annealing at 600 S C for 30 s. The RPN pretreated-HfO2 film also showed significant enhancement of the gate capacitance and retained low leakage current densities (6.70 x 10(-8) A cm(-2) at vertical bar V-G - V-FB vertical bar = 2 V). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effects of N-2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/1.2163447 | - |
dc.identifier.scopusid | 2-s2.0-31044456684 | - |
dc.identifier.wosid | 000235479500028 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.3, pp.F13 - F15 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | F13 | - |
dc.citation.endPage | F15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2163447 | - |
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