Formation and activation energy of CdxZn1-xTe nanostructures with different dimensions grown on ZnTe buffer layers
DC Field | Value | Language |
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dc.contributor.author | Kim, Tate Whan | - |
dc.contributor.author | Lee, Hong Seok | - |
dc.contributor.author | Park, Hong Lee | - |
dc.date.accessioned | 2022-12-21T12:13:44Z | - |
dc.date.available | 2022-12-21T12:13:44Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181886 | - |
dc.description.abstract | Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation process and the activation energy of different-dimensional CdxZn1-xTe/ZnTe nanostructures. The results of the AFM images show that CdxZn1-xTe quantum dots (QDs) are formed and that the dimensional transformation from CdxZn1-xTe QDs to CdxZn1-xTe quantum wires is caused by coalescence. The excitonic peak corresponding to the transition from the ground electronic subband to the ground heavy-hole transitions in CdxZn1-xTe/ZnTe nanostructures shifts to lower energy with increasing thickness of the CdxZn1-xTe layer due to variations in the thickness and the dimension of the layer. The activation energy of the electrons confined in the CdxZn1-xTe/ZnTe nanostructures, as obtained from the temperature-dependent PL spectra, was significantly affected by the thickness and the dimension of the CdxZn1-xTe layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Formation and activation energy of CdxZn1-xTe nanostructures with different dimensions grown on ZnTe buffer layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tate Whan | - |
dc.identifier.doi | 10.1063/1.2168244 | - |
dc.identifier.scopusid | 2-s2.0-31544460161 | - |
dc.identifier.wosid | 000234968600086 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ASSEMBLED QUANTUM DOTS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | BIEXCITONS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | INGAAS | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | WELLS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2168244 | - |
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