Formation and activation energy of CdxZn1-xTe nanostructures with different dimensions grown on ZnTe buffer layers
- Authors
- Kim, Tate Whan; Lee, Hong Seok; Park, Hong Lee
- Issue Date
- Jan-2006
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.88, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 88
- Number
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181886
- DOI
- 10.1063/1.2168244
- ISSN
- 0003-6951
- Abstract
- Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation process and the activation energy of different-dimensional CdxZn1-xTe/ZnTe nanostructures. The results of the AFM images show that CdxZn1-xTe quantum dots (QDs) are formed and that the dimensional transformation from CdxZn1-xTe QDs to CdxZn1-xTe quantum wires is caused by coalescence. The excitonic peak corresponding to the transition from the ground electronic subband to the ground heavy-hole transitions in CdxZn1-xTe/ZnTe nanostructures shifts to lower energy with increasing thickness of the CdxZn1-xTe layer due to variations in the thickness and the dimension of the layer. The activation energy of the electrons confined in the CdxZn1-xTe/ZnTe nanostructures, as obtained from the temperature-dependent PL spectra, was significantly affected by the thickness and the dimension of the CdxZn1-xTe layer.
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