Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs
- Authors
- Rha, Sang Ho; Jung, Jisim; Jung, Yoonsoo; Chung, Yoon Jang; Kim, Un Ki; Hwang, Eun Suk; Park, Byoung Keon; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
- Issue Date
- Dec-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO); thin-film transistors (TFTs); transmission-line method (TLM)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3357 - 3363
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 59
- Number
- 12
- Start Page
- 3357
- End Page
- 3363
- ISSN
- 0018-9383
- Abstract
- The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device structure of a thin-film transistor using an amorphous indium-gallium-zinc-oxide channel. Using the TLM, the channel characteristics independent of contact resistance were extracted for the two different contact metals, i.e., Ti and Mo. Based on these results, the mobility characteristics were compared in terms of device scaling and contact structure in the source/drain overlap region. In addition, the transport characteristics according to the contact structure of the source/drain metal electrode were investigated in detail and reproduced using the simulation model.
- Files in This Item
- Go to Link
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.