Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
DC Field | Value | Language |
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dc.contributor.author | Rha, Sang Ho | - |
dc.contributor.author | Jung, Jisim | - |
dc.contributor.author | Jung, Yoon Soo | - |
dc.contributor.author | Chung, Yoon Jang | - |
dc.contributor.author | Kim, Un Ki | - |
dc.contributor.author | Hwang, Eun Suk | - |
dc.contributor.author | Park, Byoung Keon | - |
dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Choi, Jung-Hae | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2022-12-22T01:38:14Z | - |
dc.date.available | 2022-12-22T01:38:14Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181985 | - |
dc.description.abstract | In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (<300 degrees C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an I-on/I-off current ratio greater than 10(4) and a threshold voltage of 1.7 V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717621] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1063/1.4717621 | - |
dc.identifier.scopusid | 2-s2.0-84861838344 | - |
dc.identifier.wosid | 000304265000094 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.20, pp.1 - 6 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordAuthor | MEMORY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4717621 | - |
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