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Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
- Authors
- Rha, Sang Ho; Jung, Jisim; Jung, Yoon Soo; Chung, Yoon Jang; Kim, Un Ki; Hwang, Eun Suk; Park, Byoung Keon; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
- Issue Date
- May-2012
- Publisher
- AMER INST PHYSICS
- Keywords
- MEMORY
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.20, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 20
- Start Page
- 1
- End Page
- 6
- ISSN
- 0003-6951
- Abstract
- In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (<300 degrees C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an I-on/I-off current ratio greater than 10(4) and a threshold voltage of 1.7 V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717621]
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