Impact of ozone concentration on atomic layer deposited HfO2 on GaAs
- Authors
- Chung, K. J.; Park, T. J.; Sivasubramani, P.; Kim, J.; Ahn, J.
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Atomic layer deposition; Hafnium oxide; Gallium arsenide
- Citation
- MICROELECTRONIC ENGINEERING, v.89, no.1, pp.80 - 83
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 89
- Number
- 1
- Start Page
- 80
- End Page
- 83
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181989
- DOI
- 10.1016/j.mee.2011.03.150
- ISSN
- 0167-9317
- Abstract
- Effect of ozone (O-3) concentration (90, 300 g/Nm(3)) on atomic layer deposition of HfO2 thin films on GaAs wafers using tetrakis (dimethylamino)hafnium (TDMAHf as Hf precursor was systematically studied including MISCAP performance and related microstructure. High-resolution transmission electron microscopy analyses show that oxidation of the GaAs substrate enhances with O-3 concentration which leads to an increase in interfacial layer (IL) thickness between the high-k dielectric and the substrate. The thin IL was maintained after PDA, while the high-k (HfO2) layer experienced shrinkage of similar to 12% due to densification. However HfO2 film deposited using O-3 concentration of 300 g/Nm(3) produced relatively thicker IL and thinner high-k layer which both did not show a noticeable change after PDA. This led to C-max variations depending on the different O-3 concentration. In the case of O-3 concentration of 90 g/Nm(3), increase of leakage current density by an order was observed and corresponding microstructural change is discussed. (C) 2011 Elsevier B.V. All rights reserved.
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