ALD of LaHfOx nano-laminates for high-kappa gate dielectric applications
- Authors
- Lee, B.; Hande, A.; Park, T. J.; Chung, K. J.; Ahn, J.; Rousseau, M.; Hong, D.; Li, H.; Liu, X.; Shenai, D.; Kim, J.
- Issue Date
- Dec-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- High-kappa dielectrics; ALD; LaHfOx nano-laminate films
- Citation
- MICROELECTRONIC ENGINEERING, v.88, no.12, pp.3385 - 3388
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 88
- Number
- 12
- Start Page
- 3385
- End Page
- 3388
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181993
- DOI
- 10.1016/j.mee.2011.05.033
- ISSN
- 0167-9317
- Abstract
- Electrical properties and thermal stability of LaHfOx nano-laminate films deposited on Si substrates ty atomic layer deposition (ALD) have been investigated for future high-kappa gate dielectric applications. A novel La precursor, tris(N,N'-diisopropylformamidinato) lanthanum [La((i)PrfAMD)(3)], was employed in conjunction with conventional tetrakis-(ethylmethyl)amido Hf (TEMA HO and water (H2O). The capacitance-voltage curves of the metal oxide semiconductor capacitors (MOSCAPs) showed negigible hyste:esis and frequency dispersion, indicating minimal deterioration of the interface and bulk properties. A systematic shift in the flat-band voltage (V-fb) was observed with respect to the change in structure of nano-laminate stacks as well as La2O3 to HfO2 content in the films. The EOTs obtained were in the rang of similar to 1.23-1.5 nm with leakage current densities of 1.3 x 10(-8) A/cm(2) to 1.3 x 10(-8) A/cm(2) at V-fb - 1 V. In addition, the films with a higher content of La2O3 remained amorphous up to 950 degrees C indicating very gocd thermal stability, whereas the HfO2 rich films crystallized at lower temperatures. (C) 2011 Elsevier B.V. All rights reserved.
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