Oxide nanoparticle-based fabrication and optical properties of Cu(In-1 (-) Ga-x(x))S-2 absorber layer for solar cells
DC Field | Value | Language |
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dc.contributor.author | Choi, Yo-Min | - |
dc.contributor.author | Lee, Young-In | - |
dc.contributor.author | Kim, Bum-Sung | - |
dc.contributor.author | Choa, Yong-Ho | - |
dc.date.accessioned | 2022-12-22T02:01:33Z | - |
dc.date.available | 2022-12-22T02:01:33Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182035 | - |
dc.description.abstract | The compound Cu(In-1 (-) Ga-x(x))S-2 (CIGS) was synthesized using copper oxide, indium oxide and gallium oxide mixture (CIGO) nanoparticles using salt-assisted ultrasonic spray pyrolysis (SAUSP). Under this method, CIGS can be produced without the complicated restrictions of a vacuum and an inert atmosphere. The band gap of CIGS can be controlled by introducing the desired stoichiometric quantities of starting materials. In order to synthesize CIGO nanoparticles, various NaCl/precursor ratios were used to accomplish the SAUSP process and ultimately monodisperse CIGO nanoparticles with average particle size of 9 nm without hard agglomeration were obtained. Subsequently, the CIGO nanoparticles were sulfurized to form the CIGS in H2S/Ar atmosphere at 500 degrees C. The CIGS obtained in the present study has the various band gap ranging from 1.67 to 2.34 eV depending on the Ga / (In + Ga) ratio, and those band gap correspond to the respective bulk materials. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Sequoia | - |
dc.title | Oxide nanoparticle-based fabrication and optical properties of Cu(In-1 (-) Ga-x(x))S-2 absorber layer for solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choa, Yong-Ho | - |
dc.identifier.doi | 10.1016/j.tsf.2013.05.129 | - |
dc.identifier.scopusid | 2-s2.0-84885317242 | - |
dc.identifier.wosid | 000325092000064 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.546, pp.312 - 316 | - |
dc.relation.isPartOf | Thin Solid Films | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 546 | - |
dc.citation.startPage | 312 | - |
dc.citation.endPage | 316 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHALCOPYRITE SEMICONDUCTORS | - |
dc.subject.keywordPlus | NANOCRYSTAL INKS | - |
dc.subject.keywordPlus | CUINS2 | - |
dc.subject.keywordPlus | CU(IN,GA)SE-2 | - |
dc.subject.keywordPlus | PHOTOVOLTAICS | - |
dc.subject.keywordPlus | SELENIZATION | - |
dc.subject.keywordAuthor | Cu(In-1 (-) Ga-x(x))S-2 | - |
dc.subject.keywordAuthor | CIGS | - |
dc.subject.keywordAuthor | Salt-assisted ultrasonic spray pyrolysis | - |
dc.subject.keywordAuthor | Band gap | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609013009917?via%3Dihub | - |
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