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Oxide nanoparticle-based fabrication and optical properties of Cu(In-1 (-) Ga-x(x))S-2 absorber layer for solar cells

Authors
Choi, Yo-MinLee, Young-InKim, Bum-SungChoa, Yong-Ho
Issue Date
Nov-2013
Publisher
Elsevier Sequoia
Keywords
Cu(In-1 (-) Ga-x(x))S-2; CIGS; Salt-assisted ultrasonic spray pyrolysis; Band gap
Citation
Thin Solid Films, v.546, pp.312 - 316
Indexed
SCIE
SCOPUS
Journal Title
Thin Solid Films
Volume
546
Start Page
312
End Page
316
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182035
DOI
10.1016/j.tsf.2013.05.129
ISSN
0040-6090
Abstract
The compound Cu(In-1 (-) Ga-x(x))S-2 (CIGS) was synthesized using copper oxide, indium oxide and gallium oxide mixture (CIGO) nanoparticles using salt-assisted ultrasonic spray pyrolysis (SAUSP). Under this method, CIGS can be produced without the complicated restrictions of a vacuum and an inert atmosphere. The band gap of CIGS can be controlled by introducing the desired stoichiometric quantities of starting materials. In order to synthesize CIGO nanoparticles, various NaCl/precursor ratios were used to accomplish the SAUSP process and ultimately monodisperse CIGO nanoparticles with average particle size of 9 nm without hard agglomeration were obtained. Subsequently, the CIGO nanoparticles were sulfurized to form the CIGS in H2S/Ar atmosphere at 500 degrees C. The CIGS obtained in the present study has the various band gap ranging from 1.67 to 2.34 eV depending on the Ga / (In + Ga) ratio, and those band gap correspond to the respective bulk materials. (C) 2013 Elsevier B.V. All rights reserved.
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