Oxide nanoparticle-based fabrication and optical properties of Cu(In-1 (-) Ga-x(x))S-2 absorber layer for solar cells
- Authors
- Choi, Yo-Min; Lee, Young-In; Kim, Bum-Sung; Choa, Yong-Ho
- Issue Date
- Nov-2013
- Publisher
- Elsevier Sequoia
- Keywords
- Cu(In-1 (-) Ga-x(x))S-2; CIGS; Salt-assisted ultrasonic spray pyrolysis; Band gap
- Citation
- Thin Solid Films, v.546, pp.312 - 316
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 546
- Start Page
- 312
- End Page
- 316
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182035
- DOI
- 10.1016/j.tsf.2013.05.129
- ISSN
- 0040-6090
- Abstract
- The compound Cu(In-1 (-) Ga-x(x))S-2 (CIGS) was synthesized using copper oxide, indium oxide and gallium oxide mixture (CIGO) nanoparticles using salt-assisted ultrasonic spray pyrolysis (SAUSP). Under this method, CIGS can be produced without the complicated restrictions of a vacuum and an inert atmosphere. The band gap of CIGS can be controlled by introducing the desired stoichiometric quantities of starting materials. In order to synthesize CIGO nanoparticles, various NaCl/precursor ratios were used to accomplish the SAUSP process and ultimately monodisperse CIGO nanoparticles with average particle size of 9 nm without hard agglomeration were obtained. Subsequently, the CIGO nanoparticles were sulfurized to form the CIGS in H2S/Ar atmosphere at 500 degrees C. The CIGS obtained in the present study has the various band gap ranging from 1.67 to 2.34 eV depending on the Ga / (In + Ga) ratio, and those band gap correspond to the respective bulk materials. (C) 2013 Elsevier B.V. All rights reserved.
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