Optimized Electrical Properties and Chemical Structures of SrTiO3 Thin Films on Si Using Various Interfacial Barrier Layers
- Authors
- Park, Tae Joo; Kim, Jeong Hwan; Jang, Jae Hyuck; Lee, Joohwi; Lee, Sang Woon; Kim, Un Ki; Seo, Minha; Jung, Hyung Suk; Lee, Sang Young; Hwang, Cheol Seong
- Issue Date
- Aug-2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- Nitrided; Si diffusion; Diffusion in solids; Atomic layer deposited; Si substrates; Dielectric properties; Chemical structure; Electrical property; Interface layer; Silicates; Crystallinities; Interfacial reactions; Silicate phase; Strontium alloys; Semic
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.G216 - G220
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 157
- Number
- 10
- Start Page
- G216
- End Page
- G220
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182044
- DOI
- 10.1149/1.3474233
- ISSN
- 0013-4651
- Abstract
- Interfacial barrier layers (IBLs), such as a thermally grown SiO2 using O-3, thermally nitrided SiOxNy using NH3, and an atomic layer deposited (ALD) HfO2 layer, were used as an interface layer between a sputtered SrTiO3 film and a Si substrate. Sr-silicate phase formation at the interface between the SrTiO3 film and Si substrate was suppressed by these IBLs. The ALD HfO2 layer was the most effective diffusion/reaction barrier against Si diffusion and the interfacial reactions among the IBLs examined. However, the crystallinity of the SrTiO3 layer deteriorated as a result of a chemical reaction with the underlying ALD HfO2 layer, which decreased the permittivity of the SrTiO3 layer. The SrTiO3 film with a SiOxNy IBL showed lower Si diffusion and better crystallinity, which provided the optimum dielectric properties of the film. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3474233] All rights reserved.
- Files in This Item
-
Go to Link
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182044)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.