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Effects of O-3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy
- Authors
- Park, Tae Joo; Sivasubramani, Prasanna; Coss, Brian E.; Kim, Hyun-Chul; Lee, Bongki; Wallace, Robert M.; Kim, Jiyoung; Rousseau, Mike; Liu, Xinye; Li, Huazhi; Lehn, Jean-Sebastien; Hong, Daewon; Shenai, Deo
- Issue Date
- Aug-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- Interfacial layer; Atomic layer deposited; Photons; Silicates; In-situ; Oxidants; Impurities in; Out-diffusion; Binding energy; X ray photoelectron spectroscopy; Photoelectricity; Silicate formation
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.9, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 9
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- The effect of H2O and O-3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La2O3 films grown at 250 degrees C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was suppressed in a La2O3 film grown using O-3 compared to that deposited using H2O, but interfacial layer growth was enhanced. The accumulation of C and N-related residues with low binding energy, which originated from incomplete reactions, was suppressed in La2O3 films grown using O-3. However, the use of O-3 resulted in La-carbonate phase in film. (C) 2010 American Institute of Physics. [doi :10.1063/1.3481377]
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