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The significance of Paring In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2023-04-03T16:32:58Z | - |
| dc.date.available | 2023-04-03T16:32:58Z | - |
| dc.date.created | 2023-02-11 | - |
| dc.date.issued | 2022-01-18 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/183466 | - |
| dc.publisher | 한국나노기술협의회(KoNTRS) | - |
| dc.title | The significance of Paring In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 박진성 | - |
| dc.identifier.bibliographicCitation | NCC 2022 | - |
| dc.relation.isPartOf | NCC 2022 | - |
| dc.citation.title | NCC 2022 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)