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The Formation of Dipole to Modulate Flatband Voltage (VFB) using ALD Al2O3 on the HfO2-based Si and Ge MOS Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2023-04-03T18:04:09Z | - |
| dc.date.available | 2023-04-03T18:04:09Z | - |
| dc.date.issued | 2022-01-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/183869 | - |
| dc.title | The Formation of Dipole to Modulate Flatband Voltage (VFB) using ALD Al2O3 on the HfO2-based Si and Ge MOS Devices | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 강원도 하이원 그랜드 호텔 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)