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The Improved Ferroelectric Characteristics of Ferroelectric Memory Devices using ALD SiO2 and Al2O3 Interlayers
- Authors
- 최창환
- Issue Date
- 26-Jan-2022
- Publisher
- UNIST, KSIA, COSAR
- Citation
- 한국반도체학술대회
- Conference Name
- 한국반도체학술대회
- Place
- 강원도 하이원 그랜드 호텔
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)