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고밀도, 저전압, 빠른 속도를 위한 HZO 강유전체와 IGO 채널이 적용된 3D-GAA 구조 NAND 플래시 메모리
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2023-04-03T18:04:34Z | - |
| dc.date.available | 2023-04-03T18:04:34Z | - |
| dc.date.issued | 2022-05-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/183877 | - |
| dc.title | 고밀도, 저전압, 빠른 속도를 위한 HZO 강유전체와 IGO 채널이 적용된 3D-GAA 구조 NAND 플래시 메모리 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국재료학회 춘계학술대회 | - |
| dc.citation.conferencePlace | 쏠비치 삼척 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)