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The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2021-08-02T13:58:42Z | - |
| dc.date.available | 2021-08-02T13:58:42Z | - |
| dc.date.issued | 2019-05-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18446 | - |
| dc.title | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 춘계재료학회 2019 | - |
| dc.citation.conferencePlace | 평창, 한국 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)