Arrays of TiO2 Nanosphere Monolayers on GaN-Based LEDs for the Improvement of Light Extractionopen access
- Authors
- Kim, Dohyun; Jung, UiJin; Heo, Wonjun; Kumar, Navneet; Park, Jinsub
- Issue Date
- Mar-2023
- Publisher
- MDPI
- Keywords
- TiO2 nanosphere monolayer; transfer method; GaN LED; light extraction; compound semiconductor
- Citation
- APPLIED SCIENCES-BASEL, v.13, no.5, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SCIENCES-BASEL
- Volume
- 13
- Number
- 5
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/184935
- DOI
- 10.3390/app13053042
- Abstract
- We report on the fabrication of TiO2 nanosphere (NS) monolayer arrays for the enhancement of light extraction quantum efficiency of GaN-based light-emitting diodes (LEDs). The fabricated TiO2 NSs monolayer arrays were composed of different phases of anatase (An-) and amorphous (Am-) TiO2. The arrays were transferred onto the topmost layer of LED chips via the facile icing transfer method. The LED chips covered with Am-TiO2 NS monolayer arrays showed 3.0- times enhanced light output power intensity compared with reference LED chips at a fixed injection current of 100 mA. The enhanced light extraction of LED chips by an Am-TiO2 NS monolayer can be attributed to a high transmittance (91.1%) in visible and increased light extraction probability of photons generated in LEDs, resulting from the enhanced light coupling efficiency by reduced total internal reflection (TIR). Finite-difference time-domain (FDTD) simulation results also agreed well with the experimentally observed results. Based on the experimental and theoretical results, our suggested Am- and An-TiO2 NS arrays can be considered a very facile and effective method to improve the device performance of various visible LED chips.
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