Atomic layer etching of TiN with partial sequence of O2 plasma and CF3I plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2023-05-03T13:23:26Z | - |
dc.date.available | 2023-05-03T13:23:26Z | - |
dc.date.issued | 20230309 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/185298 | - |
dc.title | Atomic layer etching of TiN with partial sequence of O2 plasma and CF3I plasma | - |
dc.type | Conference | - |
dc.citation.conferenceName | 2023 EDTM | - |
dc.citation.conferencePlace | 서울 코엑스 | - |
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