Fe-substituted silica via lattice dissolution–reprecipitation replacement for tungsten chemical mechanical planarization
- Authors
- Sun, Seho; Lee, Kangchun; Lee, Ganggyu; Kim, Yehwan; Kim, Sungmin; Hwang, Junha; Kong, Hyungoo; Chung, Kyung Yoon; Ali, Ghulam; Song, Taeseup; Paik, Ungyu
- Issue Date
- Jul-2022
- Publisher
- ELSEVIER SCIENCE INC
- Keywords
- Silica; Substitution; Iron; Coating; pH; Chemical mechanical planarization
- Citation
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.111, pp.219 - 225
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
- Volume
- 111
- Start Page
- 219
- End Page
- 225
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/185512
- DOI
- 10.1016/j.jiec.2022.04.001
- ISSN
- 1226-086X
- Abstract
- Chemical mechanical planarization (CMP) is indispensable for processing of integrated circuit semiconductordevices to attain globally planarized surfaces. One of the critical consumables in the CMP processis a slurry containing abrasives like colloidal silica (SiO2). However, there is a limit to the use of CMP slurriescontaining SiO2 under acidic conditions due to deterioration of colloidal stability, resulting in defectson the planarized surfaces. Herein, we developed an Fe-substituted SiO2 consisting of single-atom Fe(III),enabling improved colloidal stability over universal pH regions for low-defect tungsten CMP applications.
The facile and unique single-atom modification process is proposed by controlling the lattice dissolution–reprecipitation replacement of Fe3+ and Si4+ ions. The physicochemical states of Fe atoms in the surficiallattice of Fe-substituted SiO2 were confirmed through Raman spectroscopy, electron microscopy, x-rayabsorption spectroscopy, and energy-dispersive x-ray spectroscopy. Consequently, enhanced performancein W CMP was achieved using Fe-substituted SiO2. Regarding defect performance, defects werereduced from 11 scratches to 0 and 94 other defects to only 7. Additionally, the removal rate increasedfrom 67 to 122 Å/min, and the surface topography improved from 6.6 to 2.9 nm.
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