Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401] (Materials Science in Semiconductor Processing (2023) 160, (S136980012300094X), (10.1016/j.mssp.2023.107401))

Abstract

The authors regret to inform you that the information in Acknowledgement part is incorrect. As a result, the Acknowledgement part has been modified as shown below. This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education under Grant No. 2022R1A6A1A03051705, in part by Korea Basic Science Institute (National research Facilities and Equipment Center) grant funded by the Ministry of Education under Grant No. 2022R1A6C101B762, in part by the National Research Foundation (NRF) funded by the Korean Ministry of Science and ICT under Grant Nos. 2022M3I7A2085479 and 2020R1A2C2103059, and in part by SK Hynix. The authors would like to apologise for any inconvenience caused.