High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Choi, Cheol Hee | - |
dc.contributor.author | Kim, Min Jae | - |
dc.contributor.author | Hur, Jae Seok | - |
dc.contributor.author | Kim, Taikyu | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2023-06-01T07:18:12Z | - |
dc.date.available | 2023-06-01T07:18:12Z | - |
dc.date.created | 2023-05-03 | - |
dc.date.issued | 2023-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/186007 | - |
dc.description.abstract | An atomic-layer-deposited oxide nanolaminate (NL) structure with 3 dyads where a single dyad consists of a 2-nm-thick confinement layer (CL) (In0.84Ga0.16O or In0.75Zn0.25O), and a barrier layer (BL) (Ga2O3) was designed to obtain superior electrical performance in thin-film transistors (TFTs). Within the oxide NL structure, multiple-channel formation was demonstrated by a pile-up of free charge carriers near CL/BL heterointerfaces in the form of the so-called quasi-two-dimensional electron gas (q2DEG), which leads to an outstanding carrier mobility (μFE) with band-like transport, steep gate swing (SS), and positive threshold voltage (VTH) behavior. Furthermore, reduced trap densities in oxide NL compared to those of conventional oxide single-layer TFTs ensures excellent stabilities. The optimized device with the In0.75Zn0.25O/Ga2O3 NL TFT showed remarkable electrical performance: μFE of 77.1 ± 0.67 cm2/(V s), VTH of 0.70 ± 0.25 V, SS of 100 ± 10 mV/dec, and ION/OFF of 8.9 × 109 with a low operation voltage range of ≤2 V and excellent stabilities (ΔVTH of +0.27, −0.55, and +0.04 V for PBTS, NBIS, and CCS, respectively). Based on in-depth analyses, the enhanced electrical performance is attributed to the presence of q2DEG formed at carefully engineered CL/BL heterointerfaces. Technological computer-aided design (TCAD) simulation was performed theoretically to confirm the formation of multiple channels in an oxide NL structure where the formation of a q2DEG was verified in the vicinity of CL/BL heterointerfaces. These results clearly demonstrate that introducing a heterojunction or NL structure concept into this atomic layer deposition (ALD)-derived oxide semiconductor system is a very effective strategy to boost the carrier-transporting properties and improve the photobias stability in the resulting TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1021/acsami.3c00038 | - |
dc.identifier.scopusid | 2-s2.0-85152208541 | - |
dc.identifier.wosid | 000973168700001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS&INTERFACES, v.15, no.15, pp.19137 - 19151 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS&INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS&INTERFACES | - |
dc.citation.volume | 15 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 19137 | - |
dc.citation.endPage | 19151 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRON-GAS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | nanolaminate | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordAuthor | low operation voltage | - |
dc.subject.keywordAuthor | high-κ dielectric | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.3c00038 | - |
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